VS-8EWS16SLHM3 www.vishay.com vishay semiconductors revision: 22-feb-18 1 document number: 96489 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high voltage surface mount input rectifier diode, 8 a features ? glass passivated pellet chip junction ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? meets jesd 201 class 2 whisker test ? flexible solution for reliab le ac power rectification ? high surge, low v f rugged blocking diode for dc charging stations ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? on-board and off-board ev / hev battery chargers ? renewable energy inverters description the VS-8EWS16SLHM3 rectifier high voltage series has been optimized for very low forward voltage drop, with moderate leakage. the high reverse voltage range available allows design of input stage primary rectification with outstanding voltage surge capability. note ?t a = 55 c, t j = 125 c, footprint 300 mm 2 primary characteristics i f(av) 8 a v r 1600 v v f at i f 1.1 v i fsm 150 a t j max. 150 c package dpak (to-252aa) circuit configuration single ba s e cathode + 2 13 a node -- anode 1 2 3 dpak (to-252aa) output current in typical applications applications single-phase br idge three-phase bridge units nema fr-4 or g10 glas s fabric-based epoxy with 4 oz. (140 m) copper 1.2 1.6 a aluminum ims, r thca = 15 c/w 2.5 2.8 aluminum ims with heatsink, r thca = 5 c/w 5.5 6.5 major ratings and characteristics symbol characteristics values units i f(av) sinusoidal waveform 8 a v rrm 1600 v i fsm 150 a v f 8 a, t j = 25 c 1.10 v t j -40 to +150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma VS-8EWS16SLHM3 1600 1700 0.5
VS-8EWS16SLHM3 www.vishay.com vishay semiconductors revision: 22-feb-18 2 document number: 96489 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) when mounted on 1" square (650 mm 2 ) pcb of fr-4 or g-10 material 4 oz. (140 m) copper 40 c/w fig. 1 - current rati ng characteristics fig. 2 - current rating characteristics absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 105 c, 180 conduction half sine wave 8 a maximum peak one cycle ? non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 125 10 ms sine pulse, no voltage reapplied 150 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 78 a 2 s 10 ms sine pulse, no voltage reapplied 110 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 1100 a 2 ? s electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 8 a, t j = 25 c 1.1 v forward slope resistance r t t j = 150 c 20 m ? threshold voltage v f(to) 0.82 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.05 ma t j = 150 c 0.50 thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg -40 to +150 c maximum thermal resistance, ? junction to case r thjc dc operation 2.5 c/w typical thermal resistance, ? junction to ambient (pcb mount) r thja (1) 62 approximate weight 1g 0.03 oz. marking device case styl e dpak (to-252aa) 8ews16sh 130 140 150 120 110 100 90 80 maximum allowable case temperature (c) average forward current (a) 246810 12 0 30 60 90 120 180 r thjc (dc) = 2.5 c/w conduction angle ? 90 130 140 150 120 110 100 maximum allowable case temperature (c) average forward current (a) 8 6 4 21012 14 18 16 0 dc 30 60 90 120 180 r thjc (dc) = 2.5 c/w ? conduction period
VS-8EWS16SLHM3 www.vishay.com vishay semiconductors revision: 22-feb-18 3 document number: 96489 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current fig. 7 - forward voltage drop characteristics 10 12 14 16 8 6 4 2 0 maximum average forward power loss (w) average forward current (a) 8 10 246 0 rms limit 180 120 90 60 30 t j = 150 c conduction angle ? 8 6 4 2 0 10 12 14 16 18 20 maximum average forward power loss (w) average forward current (a) 246 14 16 81012 0 dc 180 120 90 60 30 rms limit t j = 150 c ? conduction period peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 110100 30 40 50 60 70 80 90 100 110 120 130 140 at any rated load condition and with rated v rrm applied following s urge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s peak half sine wave forward current (a) pulse train duration (s) 0.01 0.1 1 10 0 20 40 60 80 100 120 140 160 maximum non-repetitive s urge current v s . pul s e train duration. initial t j = t j max. no voltage reapplied rated v rrm reapplied 1 10 100 instantaneous forward current (a) instantaneous forward voltage (v) 1.0 0.5 1.5 2.0 2.5 3.0 0 t j = 25 c t j = 150 c
VS-8EWS16SLHM3 www.vishay.com vishay semiconductors revision: 22-feb-18 4 document number: 96489 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - thermal impedance z thjc characteristics ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-8EWS16SLHM3 3000 3000 13" diameter reel links to related documents dimensions www.vishay.com/doc?95519 part marking information www.vishay.com/doc?95518 packaging information www.vishay.com/doc?96495 0.1 1 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) 10 d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 steady state value (dc operation) single pulse 1 - vishay semiconductors product 2 - current rating (8 = 8 a) 3 - circuit configuration: e = single 4 - package: w = dpak (to-252aa) 5 - type of silicon: s = standard recovery rectifier 6 - voltage code x 100 = v rrm (16 = 1600 v) 7 - s = surface mountable device code 5 1 3 2 4 6 7 8 9 10 vs- 8 e w s 16 s l h m3 - h = aec-q101 qualified 9 - environmental digit: m3 = halogen-free, rohs-compliant, and terminations lead (pb)-free 10 - l = tape and reel (left oriented), for different orientation contact factory 8
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